Capacitor Film tayo sare leh oo tayo sare leh - Filim bir ah oo IGBT Snubber capacitor - CRE

Capacitor Film Polypropylene tayo sare leh - Filim bir ah oo IGBT Snubber capacitor - Sawirka Muuqaalka CRE

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Waxaan ku qanacnay in haddii si wadajir ah loo shaqeeyo, in ganacsiga naga dhexeeya uu noo keeni doono faa'iidooyin labada dhinac ah.Waxaan awoodnaa inaan kuu xaqiijino tayada badeecada ama adeegga iyo kharash gardarrada ahCapacitor Film Waxaa Loogu Talagalay Pv Inverter , Nooca Qalalan ee Filter , Dc Link Capacitor ee Mashiinka alxanka ee Simens, Dhammaan alaabooyinka waxay la yimaadaan adeegyo iib ah oo tayo fiican leh oo qumman.Suuqa ku jihaysan iyo macaamiil ku jihaysan ayaa ah waxa aanu daba joognay.Si daacadnimo leh u rajayn iskaashiga Win-Win!

Capacitor Film tayo sare leh oo tayo sare leh - Filim bir ah oo IGBT Snubber capacitor - Faahfaahinta CRE:

Xogta farsamada

Kala duwanaanshaha heerkulka shaqaynayo	Heerkulka ugu sarreeya
baaxadda awoodda	0.1μF～5.6μF
danab la qiimeeyay	700V.DC～3000V.DC
Cap.tol	± 5% (J); ± 10% (K)
U adkeyso danab	1.5Un DC/10S
Qodobka kala daadsan	tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz
Iska caabin dahaarka	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
U adkeyso shaqo joojinta hadda	具体见规格表
Dib u dhac ololka	UL94V-0
Cimriga nolosha	100000h (Un; Θhotspot≤85°C)
Heerka tixraaca	IEC61071;GB/T17702;

Voltage			Un 700V.DC,Urms400Vac;Us1050V
	Dhererka (mm)
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33


Voltage			Un 1000V.DC,Urms500Vac;Us1500V
	Dhererka (mm)
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815kii	25
3.5	57.5	38	54	3.5	28	500	1750kii	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974kii	30
5.6	57.5	42.5	56	2.8	24	400	2240	32

Voltage			Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750kii	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815kii	28
3.5	57.5	38	54	3.5	25	500	1750kii	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974kii	32

Voltage			Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980kii	28
3.5	57.5	42.5	56	3.5	25	500	1750kii	30
4	57.5	42.5	56	3.2	25	450	1800	32

Voltage			Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32

Voltage			Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Muuqaal

1. Caag, Lagu Shaabadeeyey Xabagta;

2. Dheecaannada naxaasta ee daasadaha leh ee dahaadhka ah, rakibaadda fudud ee IGBT;

3. Iska caabbinta danab sare, tgδ hooseeya, heerkulka hooseeya;

4. ESL iyo ESR hooseeya;

5. Wadnaha garaaca sare ee Hadda.

Adigoo isticmaalaya dhismayaal gudaha inductance hoose ah, kiisas caag ah oo la ikhtiraacay oo ikhtiyaari ah, iyo joojin la habeeyey, Taxanaha SMJ-P waxaa loogu talagalay in si dhakhso leh loogu beddelo IGBTS oo u adeegi kara kuwa wax-ka-baasha iyo filtarrada soo gelinta soo noqnoqda ee hadda sarreeya.

Sawirro tafatiran ee alaabta:

Hagaha Alaabta La Xiriira:

Ku qanacsanaanta dukaamada ayaa ah diiraddayada koowaad.Waxaan kor u qaadnaa heerka joogtada ah ee xirfadda, tayada, kalsoonida iyo hagaajinta tayada ugu fiican ee Polypropylene Capacitor Film Capacitor - Filim bir ah IGBT Snubber capacitor - CRE , Alaabta ayaa siin doonta adduunka oo dhan, sida: Roman, Tanzania, kazan, Waxaan sameyn doonaa Sida ugu badan ee aan u wada shaqayno oo aan kugu qanacno in aan ku tiirsannahay tayada heerka sare iyo qiimaha tartanka iyo sida ugu wanaagsan ee adeegga ka dib, si daacad ah ayaan u rajeyneynaa inaan kula shaqeyno oo aan gaarno guulo mustaqbalka!

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Shaqaalaha farsamada warshaduhu maaha oo kaliya inay haystaan teknoolojiyad sare oo heer sare ah, heerkooda Ingiriisiga sidoo kale waa mid aad u wanaagsan, tani waxay caawinaad weyn u tahay isgaarsiinta tignoolajiyada.