Qalabka korontada ee GTO ee ku shaqeeya qalabka elektaroonigga ah

Qalabka korontada ku shaqeeya ee GTO snubber ee ku jira qalabka elektarooniga ah ee korontada ku shaqeeya Sawirka Featured

Sharaxaad Gaaban:

Wareegyada Snubber waa lama huraan u ah diode-yada loo isticmaalo wareegyada beddelka. Waxay ka badbaadin kartaa diode-ka kor u kaca danabka, kuwaas oo soo bixi kara inta lagu jiro habka soo kabashada dib-u-soo-celinta.

Noo soo dir emayl Soo dejiso sida PDF ahaan

Faahfaahinta Badeecada

Calaamadaha Alaabta

Xogta farsamada

Heerkulka hawlgalka kala duwan	Heerkulka ugu badan., Sare, ugu badan: + 85℃ Heerkulka qaybta sare: +85℃ Heerkulka qaybta hoose: -40℃
kala duwanaanta awoodda	0.22~3μF
Danab lagu qiimeeyay	3000V.DC~10000V.DC
Cap.tol	±5%(J); ±10%(K)
U adkeysan danab	1.35Un DC/10S
Qodobka kala firdhinta	tgδ≤0.001 f=1KHz
Iska caabinta dahaarka	C≤0.33μF RS≥15000 MΩ (20℃ 100V.DC 60S) C> 0.33μF RS*C≥5000S (20℃ 100V.DC 60S)
U adkeyso hadda weerarka	fiiri xaashida xogta
Cimriga cimriga	100000h (Un; Θhotspot≤70°C)
Heerka tixraaca	IEC 61071;

Muuqaalka

1. Cajalad Mylar ah, oo lagu shaabadeeyay resin;

2. Rasaasta lawska naxaasta ah;

3. Iska caabbinta danab sare, tgδ hooseeya, heerkulka oo kordha;

4. ESL iyo ESR oo hooseeya;

5. Garaaca wadnaha oo sareeya.

Codsiga

1. GTO Snubber.

2. Si ballaaran ayaa loogu isticmaalaa qalabka elektaroonigga ah ee awoodda leh marka danabku ugu sarreeyo, ilaalinta nuugista hadda ugu sarreysa.

Wareegga caadiga ah

Sawir gacmeed dulmar ah

Faahfaahinta

Un=3000V.DC
Awoodda (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms (A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Awoodda (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms (A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Awoodda (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms (A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Awoodda (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms (A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Awoodda (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms (A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70