Filimka birta ah ee IGBT Snubber capacitor

Sharaxaad Gaaban:

1. Caagag, Lagu Shaabadeeyey Xabagta;

2. Dheecaannada naxaasta ee daasadaha leh ee dahaadhka ah, rakibaadda fudud ee IGBT;

3. Iska caabbinta danab sare, tgδ hooseeya, heerkulka hooseeya;

4. ESL iyo ESR hooseeya;

5. Wadnaha garaaca sare ee Hadda.

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Faahfaahinta Alaabta

Tags Product

Taxanaha SMJ-P

Codsiyada korantada elektiroonigga ah, kapacitor snubber wuxuu ku xiran yahay noodhka beddelka ee hadda jira ee ujeeddadu tahay dhimista dulinnada fiilooyinka korantada.

Inductance Parasitic waxay sababtaa koror weyn marka la damiyo (marka hadda la xannibo), oo haddii kor u kaca noocan oo kale ah uu ka bato qiimeynta qaybaha, waxaa jira walaac laga qabo fashilka ka dhalanaya kiiska ugu xun.

Adigoo isticmaalaya dhismayaal gudaha inductance hoose ah, kiisas caag ah oo la ikhtiraacay oo ikhtiyaari ah, iyo joojin la habeeyey, Taxanaha SMJ-P waxaa loogu talagalay in si dhakhso leh loogu beddelo IGBTS oo u adeegi kara kuwa wax-ka-baasha iyo filtarrada soo gelinta soo noqnoqda ee hadda sarreeya.

Xogta farsamada

Voltage	Un 700V.DC,Urms400Vac;Us1050V
	Dhererka (mm)
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Voltage	Un 1000V.DC,Urms500Vac;Us1500V
	Dhererka (mm)
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815kii	25
3.5	57.5	38	54	3.5	28	500	1750kii	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974kii	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Voltage	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750kii	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815kii	28
3.5	57.5	38	54	3.5	25	500	1750kii	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974kii	32
Voltage	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980kii	28
3.5	57.5	42.5	56	3.5	25	500	1750kii	30
4	57.5	42.5	56	3.2	25	450	1800	32
Voltage	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Voltage	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L (±1)	T (±1)	H (±1)	ESR (mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28