Qiimaha jumlada ah ee Shiinaha AC Film Capacitor - Filim bir ah oo IGBT Snubber capacitor ah - CRE

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Faahfaahinta Badeecada

Calaamadaha Alaabta

Fiidiyowga La Xiriira

Jawaab celin (2)

Shirkaddu waxay ku socotaa fikradda hawlgalka "maamulka sayniska, tayada sare iyo mudnaanta waxqabadka, macaamiisha ugu sarreeyaKondenser-ka Dc-Link ee loogu talagalay Beddelayaasha Warshadaha , Kondenser-yada Shaandhaynta AC-ga ee Waxqabadka Sare leh , Capacitor Filim Is-bogsiin ah oo Bir ahWaxaan si diiran u soo dhaweyneynaa macaamiisha, ururada shirkadaha iyo asxaabta ka kala yimid daafaha adduunka si ay noola hadlaan oo ay u helaan iskaashi si loo helo abaalmarinno wadajir ah.

Qiimaha jumlada ah ee Shiinaha AC Film Capacitor - Filim bir ah oo IGBT Snubber capacitor ah - Faahfaahinta CRE:

Xogta farsamada

Heerkulka hawlgalka kala duwan	Ugu badnaan. Heerkulka hawlgalka., Sare, ugu badnaan: +105℃ Heerkulka qaybta sare: +85℃ Heerkulka qaybta hoose: -40℃
kala duwanaanta awoodda	0.1μF~5.6μF
Danab lagu qiimeeyay	700V.DC~3000V.DC
Cap.tol	±5%(J); ±10%(K)
U adkeysan danab	1.5Un DC/10S
Qodobka kala firdhinta	tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz
Iska caabinta dahaarka	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C> 0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
U adkeyso hadda weerarka	具体见规格表
Dib-u-dhaca ololka	UL94V-0
Cimriga cimriga	100000h (Un; Θhotspot≤85°C)
Heerka tixraaca	IEC61071;GB/T17702;

Danab			Un 700V.DC,Urms400Vac;Us1050V
	Cabbirka (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33


Danab			Un 1000V.DC,Urms500Vac;Us1500V
	Cabbirka (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32

Danab			Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32

Danab			Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32

Danab			Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32

Danab			Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Muuqaalka

1. Balaastik, oo lagu shaabadeeyay resin;

2. Naxaas dahaadh leh oo lagu dhejiyay bir, si fudud loogu rakibi karo IGBT;

3. Iska caabbinta danab sare, tgδ hooseeya, heerkulka oo kordha;

4. ESL iyo ESR oo hooseeya;

5. Garaaca wadnaha oo sareeya.

Iyada oo la adeegsanayo dhismayaasha gudaha ee inductance-ka hooseeya, kiisaska resin ee la qaabeeyey ee ikhtiyaariga ah, iyo joojinta gaarka ah, Taxanaha SMJ-P waxaa loogu talagalay in si dhakhso ah loogu beddelo IGBTS waxayna u adeegi karaan sida shaandhooyinka iyo shaandhooyinka soo-gelinta ee hadda jira ee sare.

Sawirada faahfaahsan ee alaabta:

Tilmaamaha Badeecada ee la xiriira:

Waxaan sii wadnaa horumarinta iyo hagaajinta alaabtayada iyo dayactirka. Isla mar ahaantaana, waxaan si firfircoon u qabannaa cilmi-baaris iyo horumar loogu talagalay Qiimaha Jumlada ah ee Shiinaha Ac Film Capacitor - Filim bir ah oo IGBT Snubber capacitor - CRE, Badeecaddu waxay u adeegi doontaa adduunka oo dhan, sida: Paris, Itoobiya, Costa Rica, Sababtoo ah isbeddellada isbeddelka ee goobtan, waxaan isku darnaa ganacsiga badeecadaha iyadoo la adeegsanayo dadaallo iyo heer sare oo maamul. Waxaan ilaalinaa jadwalka keenista waqtiga ku habboon, naqshadaha cusub, tayada iyo hufnaanta macaamiisheenna. Hadafkayagu waa inaan gaarsiinno alaab tayo leh waqti cayiman gudaheed.

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Waxaa qortay Hannah oo ka timid California - 2018.06.18 17:25

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